18. The thresholdvoltage and the peak of proportional difference for MOSFET devices will change after the uniform high electric field stress.
在均匀的高电场应力下，MOSFET器件的阈值电压和输出特性的比例差分峰值会有所改变。
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19. Its function is to provide a latching switch action upon sensing an input thresholdvoltage, with reset accomplished by an external clock signal.
它的功能是当感应到输入电压界限时提供一个锁存开关，通过外部时钟信号完成复位。
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20. In this paper, the thresholdvoltage of binary digital baseband transmission system on graph is explained, so the concept's meaning is more clear.
本文对二进制数字基带传输系统的阈值电压进行了图象上的解释，从而使该概念的意义更加清晰。
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21. The simulation presupposes that it is possible to develop new MOS thinfilm transistors with crystal silicon substrate and lower thresholdvoltage.
模拟计算表明，利用薄体效应，可以形成以单晶硅为衬底的，阈电压较低的新型薄膜MOS晶体管。
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22. Going back to the clipping diodes now, the diodes have no effect until the signal at the output is greater than the thresholdvoltage of the diode.
回到剪辑二极管现在，二极管没有影响到信号输出大于阈电压的二极管。
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23. One new domino logic circuit whose architecture is based on full PMOS sleep transistors and a dual thresholdvoltage CMOS technology is introduced.
介绍一种全部由PMOS休眠管实现的双阈值电压多米诺逻辑电路。
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24. The influence of decomposition temperature on the thresholdvoltage is consistent with the principle of material design of thermochemical hole burning.
理论分析表明，阈值电压对热分解温度的依赖关系反映了活化能对热化学烧孔反应速度的影响。
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25. DC model of SOI MOSFET including output current model and thresholdvoltage model is proposed in this paper. The velocity saturation effect is considered.
本文首先建立了一个SOIMOSFET器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。
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26. Then , an implicit expression for electron density and a closed form of thresholdvoltage are presented fully comprising quantum mechanical ( qm ) effects.
给出了电子密度的隐式表达式和阈电压的显式表达式，它们都充分考虑了量子力学效应。
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27. By resolving Poisson equation, the mathematical expression of the thresholdvoltage model of DMOS by radiation induced positive spatial charge is obtained.
求解泊松方程，由此给出dmos辐照正空间电荷阈值电压模型表示式。
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28. FIG. 7 depicts an example set of thresholdvoltage distributions in a multi-state device with direct programming from the erased state to a programmed state.
图7描绘多状态装置中关于从经擦除状态到经编程状态的直接编程的阈值电压分布的示范性集合。
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29. FIG. 8 depicts an example set of thresholdvoltage distributions in a multi-state device with two-pass programming from the erased state to a programmed state.
图8描绘多状态装置中关于从经擦除状态到经编程状态的双通过编程的阈值电压分布的示范性集合。
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30. The relationship between the thresholdvoltage and the peak of proportional difference, and between the interface trap density and stress time are also acquired.
