1. 采用宏观连续介质模型研究了极性半导体双势结构中界面光学子模。
The interface optical (IO) phonon modes in double barrier structures of polar semiconductor are studied with the macroscopic dielectric continuum model.

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2. 理论研究了非对称双势结构中光学子发射率和光学子辅助隧穿电流。
The phonon emission rate and the phonon assisted tunneling (PAT) current in an asymmetric double barrier structure are theoretically studied.

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3. 理论研究了非对称双势结构中光学子发射率和光学子辅助隧穿电流。
The phonon emission rate and the phonon assisted tunneling (PAT) current in an asymmetric double barrier structure are theoretically studied.

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