Especially, the circuit of NAND gate my be totally made by NPN transistor, and the circuit structure is simple, easily is complicated by Integrate circuit.
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2. 一种以应用协议数据单元访问与非门闪存存储器的方法，涉及涉及智能卡应用技术领域。
The invention relates to a method for accessing a NAND gate flash memory by an application protocol data unit, which belongs to the technical field of smart card application.
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3. 通过对电路的理论分析和实验测试，并与传统的CMOS与非门比较，认为该两种ULG。
Through theoretical analysis, experiments and comparison with traditional CMOS gates, it is considered that either of the two practical circuits for ULG.
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4. 通过对电路的理论分析和实验测试，并与传统的CMOS与非门比较，认为该两种ULG。
Through theoretical analysis, experiments and comparison with traditional CMOS gates, it is considered that either of the two practical circuits for ULG.
