This is the resistor on which the negative bias is developed.
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2. 注意到这并不比固定偏压的例子复杂。
Notice that this is no more complicated than the fixed bias example.
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3. 偏压，在控制电路的两点之间的电位差。
BIAS, The potential difference applied between two points for controlling a circuit.
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4. 着重分析了负衬底偏压增强金刚石核化的机制。
The mechanism of negative bias enhanced diamond nucleation is emphatically analyzed.
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5. 在较大的直流偏压场下，介电常数大幅度降低。
The dielectric constant decreased significantly under large DC bias level.
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6. 分析了不同偏压条件下声光强度调制的波形失真。
Wave distortions in the intensity modulation on different bias conditions have been analyzed.
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7. 鞘层电容的非线性变化导致了基片偏压的非线性变化。
The nonlinear change of sheath capacitance result in the nonlinear change of tuned substrate self-bias.
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8. 用户可以设定测量信号的直流偏压，测量振幅，脉冲宽度。
User may specify the DC bias, measurement amplitude, and pulse width of the measurement signal.
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9. 当正向偏压足够高时，扩散电容很容易超过空间电荷压电容。
With sufficient forward bias, the diffusion capacitance can easily exceed the space charge region capacitance.
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10. 本文对截面部分进入塑性的钢偏压杆腹板的屈曲进行了研究。
This paper deals with the local buckling of beam-column with partial yielding of its section.
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11. 在本文中，笔者对偏压连拱隧道的施工技术进行了分析和研究。
In this article, the author analyzes and researches bias arch tunnel construction technology.
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12. 脉冲的电压，宽度，预设直流偏压和偏置时间可以由用户设定。
Pulse voltage, pulse width, preset DC bias, and bias time can be defined by user.
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13. 研究表明，负衬底偏压增强成核主要是发射电子和离子轰击的结果。
The nucleation enhancement by the negative biased substrate is believed to be a result of the electron emission and ions bombardment.
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14. 源表首先进行必要的直流测试，例如正向偏压、反向击穿电压和漏流。
The SourceMeter instrument first performs the necessary DC tests, such as forward voltage, reverse breakdown voltage, and leakage current.
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15. 横向粘贴CFRP能显著地改善偏压柱的延性，柱的承载力也有所提高；
When strengthened with transverse CFRP, the ductility of the columns improved significantly, and the ultimate strength increased as well.
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16. 着重研究了声开关部分所外加的直流偏压对在该器件中传播的声波的影响。
The influence of the DC bias on the propagation of acoustic waves in the switch part is investigated.
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17. 且随着基片偏压值的增大，电子能量有缓慢的增加，而电子密度则显著下降。
And, with the enhancement of substrate bias voltage, electron energy increase gradually, electron density decrease sharply.
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18. 器件的峰值响应波长随偏压的改变可以从8600（?） 移动到8835（?）
The peak response wavelength of the device is 8600-8835A at different bias voltages.
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19. 对利用热灯丝cvd沉积金刚石膜时负衬底偏压增强金刚石的核化过程进行了分析。
In the paper, the enhancing process of diamond nucleation by negative substrate bias in hot filament CVD system was analyzed.
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20. 结果表明，在较小的直流偏压场下，介电常数存在一个具有温度依赖性的最大值；
The results revealed that the bias characteristics of dielectric constant showed a temperature - dependent peak at small bias levd.
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21. 针对脉冲偏压电弧离子镀技术，分析了影响基体沉积温度的各项因素及其影响程度。
The influencing factors and their weights on deposited temperature have been studied in detail during pulsed bias arc ion plating (PBAIP).
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22. 适用于要求大容量，使用温度范围接近于室温的旁路、耦合等，及低直流偏压电路中。
Ideally suited for bypassing and coupling application circuits operating with low DC bias in the environment approaching to room temperature.
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23. 结果表明：不管采用哪一种施工顺序，中墙均受偏压荷载的作用并向埋深较浅侧倾斜。
The result shows that on matter which construction order is adopted, the midwall will always slant to the side of shallower depth of cover.
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24. 试验结果表明，横向粘贴CFS能显著地改善偏压柱的延性，柱的承载力也有所提高。
Experimental results indicate that when strengthened with transverse CFS, the ductility of the columns improved significantly, and the ultimate strength increased as well.
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25. 当利用这一配置测量漏流时，通过每个继电器的常闭触点同时向所有的二极管施加偏压。
When measuring the leakage current with this setup, the voltage bias is applied to all the diodes simultaneously through the normally closed contact of each relay.
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26. 干涉仪的两个臂长相差波导波长的四分之一，使器件在最佳线性点工作，无需外加电偏压。
Two arms of the interferometer are different in length by one -quarter of a guide wavelength, allowing the device to operate at its optimal linearity point without external electrical bias.
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27. 干涉仪的两个臂长相差波导波长的四分之一，使器件在最佳线性点工作，无需外加电偏压。
Two arms of the interferometer are different in length by one -quarter of a guide wavelength, allowing the device to operate at its optimal linearity point without external electrical bias.
