1. The structure of a vertical multiple-gate MOSFET based on bipolartechnology is presented.
提出了一种基于双极工艺的纵向多面栅MOSFET的结构和工艺。
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2. The paper focuses on circuit design of power switch with bipolartechnology and audio amplifier with CMOS techn.
本文论述双极型功率开关电路和CMOS音频功率放大器电路设计。
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3. Majority of conventional power amplifiers are designed using bipolartechnology on the basis of well-known merits of bipolar transistors.
大多数传统的音频功率放大器是用双极型工艺设计和制造，其基础在于良好的双极型三极管特性。
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4. The paper points out that the dielectric insulation bipolartechnology is main technology for implementing integrated circuit used in communication.
指出介质绝缘双极工艺是实现既经济又优良的电信通信用集成电路的主要工艺。
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5. Electro Energy has demonstrated its bipolar wafer-cell Ni-MH technology through a 220v, 30 Ah, 6 kWh battery system used in a HEV-to-PHEV conversion.
6. A high accuracy temperature sensor is designed by applying the temperature characteristics of a substrate bipolar transistor in CMOS technology.
利用CMOS工艺下衬底型双极晶体管的温度特性，设计了一种精度较高的温度传感器。
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7. The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
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8. To improve sensitivity and linearity, feedback loop was adopted with electrostatic in detection and managing circuit, which is fabricated with high precision bipolar linear circuit technology.
9. The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。
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10. Silicon insulated-gate bipolar transistor (IGBT) technology is progressing, becoming better and cheaper.
硅绝缘栅双极晶体管(IGBT)技术在进步，成为更好和更便宜。
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11. This thesis mainly explores the possibility of applying the bipolar membrane technology to displace the traditional ion exchange process.
这篇论文主要探索双极膜替代这传统离子交换工艺的可能性。
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12. Using the standard bipolar IC technology, a 3-D magnetotransistor is successfully designed, The sensitivity, linearity and offset of the devices are theoretically and experimentally analyzed.
13. Combining the two processes, a compatible technology of SOI full dielectric isolation and complementary bipolar process is experimented. Vertical pup and npn transisto…
从实验的角度提出了一种SOI材料全介质隔离与高频互补双极工艺兼容的工艺途径。
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14. The response of magnetically insulated ion diode (MID) during the pulse, the key issue for HIPIB technology, is analyzed for principle of HIPIB generation in bipolar-pulse mode.
15. The response of magnetically insulated ion diode (MID) during the pulse, the key issue for HIPIB technology, is analyzed for principle of HIPIB generation in bipolar-pulse mode.
